HT Semiconductor kta1668 free download

File name kta1668.pdf

KTA1668 TRANSISTOR (PNP) SOT-89 FEATURES 1. BASE High voltage: VCEO=-60V High transistors frequency 2. COLLECTOR 1 2 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3 Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector power dissipation 500 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-0.1mA,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 A Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 A hFE1 VCE=-2V,IC=-50mA 60 200 DC current gain hFE2 VCE=-2V,IC=-1A 30 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -0.7 V Base-emitter saturation voltage VB E(sat) IC=-500mA,IB=-50mA -1.2 V Transition frequency fT VCE=-10V,IC=-50mA, f=100MHz 150 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 12 pF CLASSIFICATION OF hFE Rank